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| HiPerFETTM MOSFET ISOPLUS220TM IXFC 80N085 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS = 85 V ID25 = 80 A RDS(on) = 11 m trr 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C Lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 85 85 20 30 80 45 75 320 30 1.0 5 230 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C V~ g G D S ISOPLUS220TM Isolated back surface* D = Drain, G = Gate, S = Source * Patent pending Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsicRectifier Applications 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, RMS t = 1 minute leads-to-tab 300 11..65/2.4..11 Nm/lb 2500 2 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 85 2.0 4.0 100 TJ = 25C TJ = 125C V V nA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA V GS = 20 VDC, VDS = 0 V DS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1, 2 DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI) DS98851D(05/04) 50 A 1 mA 11 m (c) 2004 IXYS All rights reserved IXFC 80N085 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 35 55 4800 V GS = 0 V, VDS = 25 V, f = 1 MHz 1675 590 50 V GS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25, RG = 2.5 (External) 75 95 31 180 V GS = 10 V, VDS = 0.5 * VDSS, ID = IT Notes 2 42 75 0.54 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220LV Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = IT Notes 1, 2 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 320 1.5 200 A A V ns C A Notes: 1. Lead 1 = Gate 2. Lead 2 = Drain 3. Lead 3 = Source 4. Back surface 4 is electrically isolated from leads 1, 2 & 3 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = 25A -di/dt = 100 A/s, VR = 50 V 0.5 6 Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2. IT = 40A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 |
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